[Diy_efi] Flyback Diode (was 555 timer...)

[dh at busb.com]

You can't drive it too hard unless you take the gate outside the supplied
voltage of the source and drain.  To the contrary, the greater the gate
voltage (N-chan) the more 'on' the device (lower resistance and voltage
drop.)

dh

----- Original Message ----- 
From: "Paul Bidmead" <bidmeadp at iinet.net.au>
To: <diy_efi at diy-efi.org>
Sent: Monday, July 11, 2005 12:40 AM
Subject: Re: [Diy_efi] Flyback Diode (was 555 timer...)


> beg my pardons....... i am using a different FET after i cooked a few
'640s
> from a low R injector on my gen-set
> i then went to ecuv2.0 with the surface mount FET rated at 60v 40amps and
a
> 2" sqare heatsink i havnt blown one up yet (touch wood) but it doesnt get
> hot.
> im not sure if im driving it too hard but it "seems" not to mind
>
> //BidSpec
>
> ----- Original Message ----- 
> From: "mike turner" <yardcooliediy at charter.net>
> To: <diy_efi at diy-efi.org>
> Sent: Saturday, July 09, 2005 6:11 AM
> Subject: Re: [Diy_efi] Flyback Diode (was 555 timer...)
>
>
> > The integral diode is generally slower than the external diode. This
> > raises its dissipation above that of a faster diode. Also, using an
> > external diode moves that dissipation off the mosfet which might be
needed
> > if you have omitted the mosfet heat sink for the bench test. :)
> >
> > Mike Turner
> > _______________________________________________
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> > Diy_efi at diy-efi.org
> > http://lists.diy-efi.org/mailman/listinfo/diy_efi
> >
>
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